UHE - High Energy
The UHE, for 300mm wafers and the global standard of high-energy ion implantation systems, provides high productivity in the energy region of up to 8.0 MeV.
- Energy range covering 10 keV up to 8,000 keV
- Increased acquisition energy and higher efficiency resulting from RF acceleration using high efficiency resonators
- Improved beam current at high energy through the optimization of the mass analyzing magnets and the FEM (Final Energy Magnet)
- Further improvement in the chain recipe implantation efficiency by installing a CVA (Continuous Variable Aperture)
- High accuracy of implantation
- High beam quality through low metal contamination and minimized cross-contamination by the installation of the VSD (Virtual Slit Disk), the TSDF (Triple Surface Disk Faraday), etc.
- High reliability and high maintainability
- The reduction of tilt angle deviation within a wafer with the new design of RD (Reduced angle Disc)
- Outstanding improvement in correcting angle with 2-wire beam profiler
- Control of the beam size at the implantation point with Bias Q-lens (option)
SHX - High Current
SHX is the single wafer type high current ion implanter from Sumitomo Heavy Industries Ion Technology, the top ion implanter manufacturer in Japan, based on a completely new concept for single wafer high current implanter, covering Ultra Shallow Junction processes for coming 20nm node generations. SHX is the world's first single wafer high current ion implanter with the combination of electrostatic and mechanical scanning of spot beam, realizing the incomparable high quality in low energy ion implantation necessary for the coming high quality source/drain extension implantations.
SHX is the single wafer type high current ion implanter from Sumitomo Heavy Industries Ion Technology, the top ion implanter manufacturer in Japan, based on a completely new concept for single wafer high current implanter, covering Ultra Shallow Junction processes for coming 20nm node generations. SHX is the world's first single wafer high current ion implanter with the combination of electrostatic and mechanical scanning of spot beam, realizing the incomparable high quality in low energy ion implantation necessary for the coming high quality source/drain extension implantations.
- For 300mm/200mm wafers
- Application to coming process of 20nm node
- High beam current at 200eV for commercial productions
- Realization of high precision source/drain extension implantations through,
- Incomparable uniformity over a wafer, including beam sizes and beam divergent angles, and
- High quality of beam parallelism and repeatability within a wafer, making multiple-step implantations to compensate angle deviations and non-uniformity not necessary
- High energy purity equivalent to drift mode implantation at ultra-low energy, attained through an outstanding energy filter mechanism after deceleration
- Metal contamination and cross contamination minimized
- Outstanding plasma shower system for wafer charging control
- High reliability and easy maintenance
MC - Medium Current
Applicable for 300 mm to 150 mm wafers, the NV-MC3 is the newest high-performance medium current ion implantation system that pursues the highest implantation quality in the world.
Applicable for 300 mm to 150 mm wafers, the NV-MC3 is the newest high-performance medium current ion implantation system that pursues the highest implantation quality in the world.
- Implantation energy of 5 keV to 750 keV
- High beam current in the low energy region
- Minimization of metal contamination by minimizing the use of magnets
- Minimization of energy contamination by installing an energy filter in the final stage
- Minimization of the implantation angle deviation and the beam shape change by using a left-right symmetric beam line
- Improvement of uniformity though the reduction of the beam divergence by installing a deceleration mechanism in the final stage, and fixing the implant position with the use of a unique scanning method
- Support for heavy ion implantation (standard)
- High reliability and high maintainability
